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arXiv · 2210.13340

Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals

I. D. Avdeev·S. V. Goupalov·M. O. Nestoklon
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Abstract

The Landé or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in nanostructures. We report on the comprehensive theoretical analysis of electron and hole g-factors in lead chalcogenide nanocrystals. By combining symmetry analysis, atomistic calculations, and extended k.p theory, we relate calculated linear-in-magnetic field energy splittings of confined electron states in nanocrystals to the intravalley g-factors of the multi-valley bulk materials, renormalized due to the quantum confinement. We demonstrate that this renormalization is correctly reproduced by analytical expressions derived in the framework of the extended k.p model.

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I. D. Avdeev, S. V. Goupalov, M. O. Nestoklon. 2022-10-24. Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals. https://doi.org/10.1103/physrevb.107.035414

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