arXiv ScienceSearch

arXiv · 2210.12956

Gate-tunable Lifshitz transition of Fermi arcs and its nonlocal transport signatures

Abstract

One hallmark of the Weyl semimetal is the emergence of Fermi arcs (FAs) in the surface Brillouin zone that connect the projected Weyl nodes of opposite chirality. The unclosed FAs can give rise to various exotic effects that have attracted tremendous research interest. The configurations of the FAs are usually thought to be determined fully by the band topology of the bulk states, which seems impossible to manipulate. Here, we show that the FAs can be simply modified by a surface gate voltage. Because the penetration length of the surface states depends on the in-plane momentum, a surface gate voltage induces an effective energy dispersion. As a result, a continuous deformation of the surface band can be implemented by tuning the surface gate voltage. In particular, as the saddle point of the surface band meets the Fermi energy, the topological Lifshitz transition takes place for the FAs, during which the Weyl nodes switch their partners connected by the FAs. Accordingly, the magnetic Weyl orbits composed of the FAs on opposite surfaces and chiral Landau bands inside the bulk change its configurations. We show that such an effect can be probed by the nonlocal transport measurements in a magnetic field, in which the switch on and off of the nonlocal conductance by the surface gate voltage signals the Lifshitz transition. Our work opens a new route for manipulating the FAs by surface gates and exploring novel transport phenomena associated with the topological Lifshitz transition.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Yue Zheng, Wei Chen, Xiangang Wan, D. Y. Xing. 2022-10-24. Gate-tunable Lifshitz transition of Fermi arcs and its nonlocal transport signatures. https://doi.org/10.1088/0256-307x%2F40%2F9%2F097301

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Nanoscale Dipolar Fields in Artificial Spin Ice Probed by Scanning NV Magnetometry

We investigate dipolar coupling fields in two square-lattice artificial spin ice (ASI) systems with different lattice constants using scanning probe microscopy based on a single nitrogen-vacancy (NV) center in diamond. This technique offers unprecedented spatial resolution, operates under ambient condition, and provides quantitative stray field measurements, making it uniquely suited for studying nanoscale magnetic textures. Our approach combines fluorescence quenching imaging and continuous-wave optically detected magnetic resonance (cODMR). A comparison of the two ASI samples, which differ in their lattice constants of 1000 nm and 910 nm respectively, reveals differences in the appearance of ice-rule violations - deviations from the lowest energy configuration in ASI vertices. We attribute these variations to varying coupling strengths dictated by the lattice constant. From the cODMR data, we extract both axial and transverse components of the local magnetic field relative to the NV axis. Micromagnetic modeling of these measurements allows for an iterative determination of the external magnetic field orientation, the detection of subtle magnetization tilts induced by weak external fields (well below the nanomagnets' switching threshold), and an estimation of the effective saturation magnetization, thereby accounting for deviations in nanomagnet dimensions. These findings provide crucial insights into the tunable magnetic interactions in ASI, paving the way for the design of advanced magnonic and spintronic devices.

cond-mat.mes-hall

Plasmon-driven electron-hole pair formation in a non-equilibrium Fermi liquid

Collective modes in Fermi liquids are usually regarded as dissipation channels that relax electronic excitations through Landau damping. Whether such modes can instead mediate the formation of correlated electronic states under non-equilibrium conditions remains an open question. Here, we show that under optical photo-doping, a bulk plasmon can drive correlated inter-band transfer within a transient electronic continuum. Using time- and angle-resolved photoemission spectroscopy (Tr-ARPES) on EuCd$_2$As$_2$ supported by electronic structure calculations, we observe that at high excitation density, plasmons transfer energy from a weakly dispersing bulk band into unoccupied surface states. This bulk-to-surface redistribution stabilizes a long-lived, energy-localized spectral feature consistent with a Mahan exciton. Our results reveal a non-equilibrium regime of Fermi-liquid physics in which collective modes do not merely dissipate energy, but also stabilize correlated bound states.

cond-mat.mes-hall

Band offsets in InP/ZnSe nanocrystals evaluated using two-photon transitions analysis

We present a semi-analytical theoretical kp-study of the energy structure and optical transitions in spherical core-shell InP/ZnSe nanocrystals. We use the eight-band Kane model and the six-band Luttinger Hamiltonian in the spherical approximation to calculate the electron and hole energy spectra, respectively. The influence of the Coulomb interaction is considered perturbatively. The one- and two-photon absorption spectra are calculated as functions of the band offsets between the InP core and ZnSe shell. Exciton states responsible for the main features in the two-photon absorption spectra of InP/ZnSe nanocrystals are identified and the spectral dependence of the linear-circular dichroism signal is predicted. We show that in the presence of inhomogeneous broadening, the transition to the ground two-photon-active exciton state can be hidden behind intense transitions to higher-lying states. A comparison of the calculated one- and two-photon absorption spectra with the available experimental data shows that, depending on the lattice strain in the InP core, the range of possible valence band offsets is 0.85-1 eV. The determined range exceeds the natural valence band offset of 0.57 eV and indicates the presence of electric dipoles formed by the preferential Zn-P bonds at the InP/ZnSe heterointerface.

cond-mat.mes-hall