arXiv · 2210.09555
First Test Results of the Trans-Impedance Amplifier Stage of the Ultra-fast HPSoC ASIC
Abstract
We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog front end with \b{eta}-particles impinging on 3x3 AC-LGAD arrays (500 um pitch, 200x200 um2 metal) confirms a fast output rise time of 600 ps and good timing performance with a jitter of 45 ps. Further calibration experiments and TCT laser studies indicate some gain limitations that are being investigated and are driving the design of the second-generation pre-amplification stages to reach a jitter of 15 ps.
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C. Chock, K. Flood, L. Macchiarulo, I. Mostafanezhad, R. Perron, D. Uehara, F. Martinez-Mckinney, A. Martinez- Rojas, S. Mazza, M. Nizam, J. Ott, E. Ryan, H. F. -W. Sadrozinski, B. Schumm, A. Seiden, K. Shin, M. Tarka, M. Wilder, Y. Zhao. 2022-10-18. First Test Results of the Trans-Impedance Amplifier Stage of the Ultra-fast HPSoC ASIC. https://doi.org/10.1088/1748-0221/18/02/c02016
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