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arXiv · 2209.14531

Flopping-mode spin qubit in a Si-MOS quantum dot

Rui-Zi Hu·Rong-Long Ma·Ming Ni·Yuan Zhou·Ning Chu·Wei-Zhu Liao·Zhen-Zhen Kong·Gang Cao·Gui-Lei Wang·Hai-Ou Li·Guo-Ping Guo
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Abstract

Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.

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Rui-Zi Hu, Rong-Long Ma, Ming Ni, Yuan Zhou, Ning Chu, Wei-Zhu Liao, Zhen-Zhen Kong, Gang Cao, Gui-Lei Wang, Hai-Ou Li, Guo-Ping Guo. 2022-09-29. Flopping-mode spin qubit in a Si-MOS quantum dot. https://doi.org/10.1063/5.0137259

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