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arXiv · 2209.05750

Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

Hitesh S·Pushkar Dasika·Kenji Watanabe·Takashi Taniguchi·Kausik Majumdar
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Abstract

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered materials (such as, MoS$_2$) as the channel due to their dangling-bond-free ultra-thin nature and the possibility of layer-by-layer transfer. MoS$_2$-based MBCFET is thus an attractive proposition for drive current boost without compromising on the electrostatics and footprint. Here we demonstrate a 3-level MoS$_2$ MBCFET, where each vertically stacked channel is dual-gated to achieve a saturation current of 174.9 $\mu$A (which translates to \txc{90 $\mu$A per $\mu$m footprint width (@2.7 $\mu$m channel length), a near-ideal sub-threshold slope of 63 mV/dec, and an on-off ratio $>$$10^8$. This work sets the benchmark for layer-material-based MBCFET in terms of the number of parallel channels integrated, simultaneously providing high drive current and excellent electrostatic control.

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Hitesh S, Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. 2022-09-13. Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric. https://arxiv.org/abs/2209.05750

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