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arXiv · 2209.01424

Dynamic Write-Voltage Design and Read-Voltage Optimization for MLC NAND Flash Memory

Runbin Cai·Yi Fang·Zhifang Shi·Lin Dai·Guojun Han
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Abstract

To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit error rate (RBER), which can obtain the optimal write voltage by minimizing a cost function. In order to further improve the decoding performance of flash memory, we put forward a low-complexity entropy-based read-voltage optimization scheme, which derives the read voltages by searching for the optimal entropy value via a log-likelihood ratio (LLR)-aware cost function. Simulation results demonstrate the superiority of our proposed dynamic write-voltage design scheme and read-voltage optimization scheme with respect to the existing counterparts.

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Runbin Cai, Yi Fang, Zhifang Shi, Lin Dai, Guojun Han. 2022-09-03. Dynamic Write-Voltage Design and Read-Voltage Optimization for MLC NAND Flash Memory. https://arxiv.org/abs/2209.01424

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