Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

Pranta Saha; Sridhar Majety; Marina Radulaski

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arXiv · 2208.02996

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

Pranta Saha·Sridhar Majety·Marina Radulaski

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Abstract

Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.

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Pranta Saha, Sridhar Majety, Marina Radulaski. 2023-01-04. Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware. https://arxiv.org/abs/2208.02996

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