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arXiv · 2208.01142

Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled Surrogate Model

Albert Lu·Jordan Marshall·Yifan Wang·Ming Xiao·Yuhao Zhang·Hiu Yung Wong
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Abstract

In this paper, two methodologies are used to speed up the maximization of the breakdown volt-age (BV) of a vertical GaN diode that has a theoretical maximum BV of ~2100V. Firstly, we demonstrated a 5X faster accurate simulation method in Technology Computer-Aided-Design (TCAD). This allows us to find 50% more numbers of high BV (>1400V) designs at a given simulation time. Secondly, a machine learning (ML) model is developed using TCAD-generated data and used as a surrogate model for differential evolution optimization. It can inversely design an out-of-the-training-range structure with BV as high as 1887V (89% of the ideal case) compared to ~1100V designed with human domain expertise.

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Albert Lu, Jordan Marshall, Yifan Wang, Ming Xiao, Yuhao Zhang, Hiu Yung Wong. 2022-07-18. Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled Surrogate Model. https://doi.org/10.1016/j.sse.2022.108468

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