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arXiv · 2207.13152

Mott-moir\'e excitons

T. -S. Huang·Yang-Zhi Chou·C. L. Baldwin·Fengcheng Wu·Mohammad Hafezi
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Abstract

We develop a systematic theory for excitons subject to Fermi-Hubbard physics in moir\'e twisted transition metal dichalcogenides (TMDs). Specifically, we consider excitons in moir\'e systems for which the valence band is in the Mott-insulating regime. These "Mott-moir\'e excitons", which are achievable in twisted TMD heterobilayers, are bound states of a magnetic polaron in the valence band and a free electron in the conduction band. We find significantly narrower exciton bandwidths in the presence of Hubbard physics, serving as a potential experimental signature of strong correlations. We also demonstrate the high tunability of Mott-moir\'e excitons through the dependence of their binding energies, diameters, and bandwidths on the moir\'e period. Our work provides guidelines for future exploration of strongly correlated excitons in twisted TMD heterobilayers.

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T. -S. Huang, Yang-Zhi Chou, C. L. Baldwin, Fengcheng Wu, Mohammad Hafezi. 2022-07-26. Mott-moir\'e excitons. https://doi.org/10.1103/physrevb.107.195151

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