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arXiv · 2207.12885

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Yongcheng Deng·Xionghua Liu·Yiyuan Chen·Zongzheng Du·Nai Jiang·Chao Shen·Enze Zhang·Houzhi Zheng·Hai-Zhou Lu·Kaiyou Wang
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Abstract

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, without external magnetic field and injected spin current. Our simulations reveal that the switching is originated from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

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Yongcheng Deng, Xionghua Liu, Yiyuan Chen, Zongzheng Du, Nai Jiang, Chao Shen, Enze Zhang, Houzhi Zheng, Hai-Zhou Lu, Kaiyou Wang. 2022-07-26. All-electrical switching of a topological non-collinear antiferromagnet at room temperature. https://doi.org/10.1093/nsr%2Fnwac154

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