Degenerate optical parametric amplification in CMOS silicon

Abstract

Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes. Crystalline inversion symmetry precludes silicon from natively exhibiting second-order nonlinear optical processes. In this work, we build on recent work in silicon photonics that break this material symmetry using large bias fields, thereby enabling $\chi^{(2)}$ interactions. Using this approach, we demonstrate both second-harmonic generation (with a normalized efficiency of $0.2\,\%\,\mathrm{W^{-1} cm^{-2}}$) and, to our knowledge, the first degenerate $\chi^{(2)}$ optical parametric amplifier (with relative gain of $0.02\,\mathrm{dB}$ using $3\,\mathrm{mW}$ of pump power on-chip at a pump wavelength of $1196\,\mathrm{nm}$) using silicon-on-insulator waveguides fabricated in a CMOS-compatible commercial foundry. We expect this technology to enable the integration of novel nonlinear optical devices such as optical parametric amplifiers, oscillators, and frequency converters into large-scale, hybrid photonic-electronic systems by leveraging the extensive ecosystem of CMOS fabrication.