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arXiv · 2206.14073

Colossal piezoresistance in narrow-gap Eu5In2Sb6

S. Ghosh·C. Lane·F. Ronning·E. D. Bauer·J. D. Thompson·J. -X. Zhu·P. F. S. Rosa·S. M. Thomas
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Abstract

Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($\sigma$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors. Enhanced piezoresistance has been traditionally observed in two classes of uncorrelated materials: nonmagnetic semiconductors and composite structures. We report the discovery of a remarkably large piezoresistance in Eu$_5$In$_2$Sb$_6$ single crystals, wherein anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic interactions. Eu$_5$In$_2$Sb$_6$ shows a highly anisotropic piezoresistance, and uniaxial pressure along [001] of only 0.4~GPa leads to a resistivity drop of more than 99.95\% that results in a colossal piezoresistance factor of $5000\times10^{-11}$Pa$^{-1}$. Our result not only reveals the role of interactions and phase separation in the realization of colossal piezoresistance, but it also highlights a novel route to multi-functional devices with large responses to both pressure and magnetic field.

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S. Ghosh, C. Lane, F. Ronning, E. D. Bauer, J. D. Thompson, J. -X. Zhu, P. F. S. Rosa, S. M. Thomas. 2022-06-28. Colossal piezoresistance in narrow-gap Eu5In2Sb6. https://doi.org/10.1103/physrevb.106.045110

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