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arXiv · 2206.10600

Voltage-amplified heat rectification in SIS junctions

Ilia Khomchenko·Henni Ouerdane·Giuliano Benenti
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Abstract

The control of thermal fluxes -- magnitude and direction, in mesoscale and nanoscale electronic circuits can be achieved by means of heat rectification using thermal diodes in two-terminal systems. The rectification coefficient $\mathcal{R}$, given by the ratio of forward and backward heat fluxes, varies with the design of the diode and the working conditions under which the system operates. A value of $\mathcal{R}\ll 1$ or $\mathcal{R}\gg 1$ is a signature of high heat rectification performance but current solutions allowing such ranges, necessitate rather complex designs. Here, we propose a simple solution: the use of a superconductor-insulator-superconductor (SIS) junction under an applied fast oscillating (THz range) voltage as the control of the heat flow direction and magnitude can be done by tuning the initial value of the superconducting phase. Our theoretical model based on the Green functions formalism and coherent transport theory, shows a possible sharp rise of the heat rectification coefficient with values up to $\mathcal{R} \approx 500$ beyond the adiabatic regime. The influence of quantum coherent effects on heat rectification in the SIS junction is highlighted.

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Ilia Khomchenko, Henni Ouerdane, Giuliano Benenti. 2022-12-13. Voltage-amplified heat rectification in SIS junctions. https://doi.org/10.1103/physrevb.106.245413

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