arXiv Science⌕ Search

arXiv · 2206.09922

Enhanced superconductivity through virtual tunneling in Bernal bilayer graphene coupled to WSe$_2$

Abstract

Motivated by a recent experiment [arXiv:2205.05087], we investigate a possible mechanism that enhances superconductivity in hole-doped Bernal bilayer graphene due to a proximate WSe$_2$ monolayer. We show that the virtual tunneling between WSe$_2$ and Bernal bilayer graphene, which is known to induce Ising spin-orbit coupling, can generate an additional attraction between two holes, providing a potential explanation for enhancing superconductivity in Bernal bilayer graphene. Using microscopic interlayer tunneling, we derive the Ising spin-orbit coupling and the effective attraction as functions of the twist angle between Bernal bilayer graphene and the WSe$_2$ monolayer. Our theory provides an intuitive and physical explanation for the intertwined relation between Ising spin-orbit coupling and superconductivity enhancement, which should motivate future studies.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Yang-Zhi Chou, Fengcheng Wu, Sankar Das Sarma. 2022-11-03. Enhanced superconductivity through virtual tunneling in Bernal bilayer graphene coupled to WSe$_2$. https://doi.org/10.1103/physrevb.106.l180502

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Gate-Switchable Josephson Diode Effect in Graphene via Magnetochiral Anisotropy

The Josephson diode effect originating from magnetochiral anisotropy has thus far been realized primarily in conventional two-dimensional electron gases. Here, we propose a graphene-based Josephson junction as a broadly gate-tunable platform for nonreciprocal supercurrent transport. We demonstrate that the nonreciprocal critical current not only reverses its sign when graphene is switched from $n$- to $p$-type doping via electrostatic gating, but its efficiency can also be continuously tuned from zero up to $\sim 40\%$. This gate-controlled polarity switching and efficiency modulation---unique to the chiral nature of Dirac fermions in graphene---has no counterpart in conventional semiconductor systems, positioning the graphene Josephson diode as a highly versatile component for advanced superconducting circuits.

cond-mat.supr-con↗

Interaction and disorder effects on Cooper instability in two-dimensional fractional Dirac semimetals

Employing a renormalization group analysis that allows for an unbiased treatment of competing physical ingredients, we systematically trace how the interplay between Cooper pairing and disorder scatterings governs the emergence or suppression of Cooper instability in the low-energy regime of fractional Dirac semimetals.In the clean limit, we find that the emergence of Cooper instability requires surpassing a finite interaction threshold $|λ_c|$, and depends sensitively on both the fractional exponent $α$ and the transfer momentum $\mathbf{Q}=(Q,ϕ)$. Specifically, bigger values of $α$ enhance the tendency toward BCS instability. For $α\in(0.001,0.61)$, the $(Q,ϕ)$ parameter space separates into two distinct regions: Zone-\uppercase\expandafter{\romannumeral1}, where Cooper instability is suppressed, and Zone-\uppercase\expandafter{\romannumeral2}, where it is allowed. In the presence of disorders, we demonstrate that they can either promote or suppress Cooper instability. Disorder of type $Δ_1$ or $Δ_2$ enhances superconductivity by reducing the critical interaction threshold $|λ_c|$ and expanding the superconducting phase space (Zone-\uppercase\expandafter{\romannumeral2}). In sharp contrast, either $Δ_0$ or $Δ_3$ suppresses Cooper pairing by increasing $|λ_c|$ and shrinking the available phase space (Zone-\uppercase\expandafter{\romannumeral1}). Although Cooper instability can be enhanced when promotive disorders ($Δ_1$, $Δ_2$) coexist with a single suppressive disorder ($Δ_0$ or $Δ_3$), the suppressive influence of $Δ_{0,3}$ generally dominates the promotive effects of $Δ_{1,2}$ in the presence of all sorts of disorders. These results would be helpful for further studies of fractional Dirac semimetals and alike materials.

cond-mat.supr-con↗

Relaxation Dynamics of Superconducting/Normal Interfaces in the Intermediate State of a type-I superconductor

The dynamics of phase boundaries, such as superconducting/normal (S/N) interfaces in type-I superconductors, are typically obscured in conventional magnetic measurements, which are strongly influenced by surface barriers and global flux processes. Here, we employ the complex ac magnetostrictive coefficient as a sensitive probe of the bulk dynamics of S/N interfaces in the intermediate state of lead. The ac magnetostrictive coefficient exhibits an unusual complex response, with a negative real component and a positive imaginary component. Frequency-dependent measurements show that the magnitude of the real component decreases monotonically with increasing frequency, whereas the imaginary component first increases, reaches a broad maximum, and then decreases. In contrast, ac susceptibility displays a conventional Debye-type magnetic relaxation with a different phase relation between its real and imaginary components. We propose that the magnetostrictive response arises from ac-field-driven relaxation and rearrangement of metastable S/N domain configurations toward states of lower free energy. These results reveal a distinct interfacial relaxation channel in the intermediate state and establish the complex ac magnetostrictive coefficient as a sensitive probe of nonequilibrium S/N interface dynamics.

cond-mat.supr-con↗