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arXiv · 2206.04807

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

K. Oreszczuk·J. Slawinska·A. Rodek·M. Potemski·C. Skierbiszewski·P. Kossacki
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Abstract

We demonstrate a novel electro-luminescence device in which GaN-based $\mu$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $\mu$-LED surface. A special $\mu$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.

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K. Oreszczuk, J. Slawinska, A. Rodek, M. Potemski, C. Skierbiszewski, P. Kossacki. 2022-06-08. Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides. https://arxiv.org/abs/2206.04807

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