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arXiv · 2206.02328

Mechanically transferred large-area Ga$_2$O$_3$ passivates graphene and suppresses interfacial phonon scattering

Matthew Gebert·Semonti Bhattacharyya·Christopher C Bounds·Nitu Syed·Torben Daeneke·Michael S Fuhrer
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Abstract

We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga$_2$O$_3$ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimetre-scale passivated and bare graphene on SiO$_2$/Si indicate that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO$_2$ by high-dielectric-constant Ga$_2$O$_3$, and the relatively high characteristic phonon frequencies of Ga$_2$O$_3$. Raman spectroscopy and electrical measurements indicate that Ga$_2$O$_3$ passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al$_2$O$_3$.

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Matthew Gebert, Semonti Bhattacharyya, Christopher C Bounds, Nitu Syed, Torben Daeneke, Michael S Fuhrer. 2022-06-06. Mechanically transferred large-area Ga$_2$O$_3$ passivates graphene and suppresses interfacial phonon scattering. https://doi.org/10.1021/acs.nanolett.2c03492

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