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arXiv · 2205.00725

Radiation damage uniformity in a SiPM

O. Bychkova·E. Garutti·E. Popova·A. Stifutkin·S. Martens·P. Parygin·A. Kaminsky·J. Schwandt
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Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $\mu$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_\mathit{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U^{IV}_\mathit{bd}$ was extracted and compared to that of the breakdown voltage from the gain measurements $U^{G}_\mathit{bd}$.

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O. Bychkova, E. Garutti, E. Popova, A. Stifutkin, S. Martens, P. Parygin, A. Kaminsky, J. Schwandt. 2022-05-02. Radiation damage uniformity in a SiPM. https://doi.org/10.1016/j.nima.2022.167042

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