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arXiv · 2204.13173

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

M. Hollenbach·N. Klingner·N. S. Jagtap·L. Bischoff·C. Fowley·U. Kentsch·G. Hlawacek·A. Erbe·N. V. Abrosimov·M. Helm·Y. Berencén·G. V. Astakhov
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Abstract

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

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M. Hollenbach, N. Klingner, N. S. Jagtap, L. Bischoff, C. Fowley, U. Kentsch, G. Hlawacek, A. Erbe, N. V. Abrosimov, M. Helm, Y. Berencén, G. V. Astakhov. 2022-04-27. Wafer-scale nanofabrication of telecom single-photon emitters in silicon. https://doi.org/10.1038/s41467-022-35051-5

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