arXiv ScienceSearch

arXiv · 2204.12880

Designer magnetic topological graphene nanoribbons

Abstract

The interplay of magnetism and topology lies at the heart of condensed matter physics, which offers great opportunities to design intrinsic magnetic topological materials hosting a variety of exotic topological quantum states including the quantum anomalous Hall effect (QAHE), axion insulator state, and Majorana bound states. Extending this concept to one-dimension (1D) systems offers additional rich quantum spin physics with great promise for molecular-scale spintronics. Despite recent progress in the discovery of symmetry-protected topological quantum phases in 1D graphene nanoribbons (GNRs), the rational design and realization of magnetic topological GNRs (MT-GNRs) represents a grand challenge, as one must tackle multiple dimensions of complexity including time-reversal symmetry (TRS), spatial symmetry (width, edge, end geometry) and many-electron correlations. Here, we devised a new route involving the real- and reciprocal-space descriptions by unifying the chemists and physicists perspectives, for the design of such MT-GNRs with non-trivial electronic topology and robust magnetic terminal. Classic Clar's rule offers a conceptually qualitative real-space picture to predict the transition from closed-shell to open-shell with terminal magnetism, and band gap reopening with possible non-trivial electronic topology in a series of wave-like GNRs, which are further verified by first principle calculations of band-structure topology in a momentum-space. With the advance of on-surface synthesis and careful design of molecular precursors, we have fabricated these MT-GNRs with observation of topological edge bands, whose terminal pi-magnetism can be directly captured using a single-nickelocene spin sensor. Moreover, the transition from strong anti-ferromagnetic to weak coupling (paramagnetism-like) between terminal spins can be controlled by tuning the length of MT-GNRs.

Explore related subjects

Keep this discovery

BibTeXRIS

Shaotang Song, Pei Wen Ng, Shayan Edalatmanesh, Andrés Pinar Solé, Xinnan Peng, Jindřich Kolorenč, Zdenka Sosnová, Oleksander Stetsovych, Jie Su, Jing Li, Hongli Sun, Alexander Liebig, Chenliang Su, Jishan Wu, Franz J. Giessibl, Pavel Jelinek, Chunyan Chi, Jiong Lu. 2022-04-27. Designer magnetic topological graphene nanoribbons. https://arxiv.org/abs/2204.12880

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall