Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Bolun Zeng; Haochen Zhang; Zikun Xiang; Chao Luo; Yuanke Zhang; Mingjie Weng; Qiwen Xue; Sirui Hu; Yue Sun; Lei Yang; Haiding Sun; Guoping Guo

arXiv · 2204.09216

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Bolun Zeng·Haochen Zhang·Zikun Xiang·Chao Luo·Yuanke Zhang·Mingjie Weng·Qiwen Xue·Sirui Hu·Yue Sun·Lei Yang·Haiding Sun·Guoping Guo

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Abstract

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K. The important electrical merits of the device, including drain saturation current (IDsat), on-resistance (RON), transductance, subthreshold swing (SS), gate leakage current, and Schottky barrier height, are comprehensively characterized and their temperature-dependent behavior was statistically analyzed. In addition, the LFN of the device shows an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be significantly reduced at cryogenic temperature. These results are of great importance to motivate further studies into the GaN-based cryo-devices and systems.

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Bolun Zeng, Haochen Zhang, Zikun Xiang, Chao Luo, Yuanke Zhang, Mingjie Weng, Qiwen Xue, Sirui Hu, Yue Sun, Lei Yang, Haiding Sun, Guoping Guo. 2022-04-20. Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications. https://arxiv.org/abs/2204.09216

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