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arXiv · 2204.02037

Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing

L. Camilli·M. Galbiati·L. Di Gaspare·M. De Seta·I. Píš·F. Bondino·A. Caporale·V. -P. Veigang-Radulescu·S. Hofmann·A. Sodo·R. Gunnella·L. Persichetti
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Abstract

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 {\deg}C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 {\deg}C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors.

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L. Camilli, M. Galbiati, L. Di Gaspare, M. De Seta, I. Píš, F. Bondino, A. Caporale, V. -P. Veigang-Radulescu, S. Hofmann, A. Sodo, R. Gunnella, L. Persichetti. 2022-04-05. Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing. https://doi.org/10.1016/j.apsusc.2022.154291

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