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arXiv · 2203.06734

Scanning tunneling microscopy of Bi$_2$Te$_3$ films prepared by pulsed laser deposition: from nanocrystalline structures to van der Waals epitaxy

N. I. Fedotov·A. A. Maizlakh·V. V. Pavlovskiy·G. V. Rybalchenko·S. V. Zaitsev-Zotov
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Abstract

Bi$_2$Te$_3$ is a material with high efficiency of thermoelectric energy conversion. Recently, it was also recognized as a topological insulator, and is often used as the basis for creation of other types of topological matter. Pulsed laser deposition (PLD) is widely considered as a simple method for growing of multicomponent films, but not as a tool for van der Waals epitaxy. We demonstrate here that the van der Waals epitaxy of Bi$_2$Te$_3$ is indeed impossible in vacuum PLD, but is possible in the presence of a background gas, which is confirmed by the results of scanning tunneling microscopy and spectroscopy studies. Results of {\it ab initio} calculations reproduce tunneling spectra of the first three terraces of epitaxial films of Bi$_2$Te$_3$. In addition, an unusual hexagonal superstructure resembling a charge-density wave is observed in overheated films.

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N. I. Fedotov, A. A. Maizlakh, V. V. Pavlovskiy, G. V. Rybalchenko, S. V. Zaitsev-Zotov. 2022-03-13. Scanning tunneling microscopy of Bi$_2$Te$_3$ films prepared by pulsed laser deposition: from nanocrystalline structures to van der Waals epitaxy. https://doi.org/10.1016/j.surfin.2022.102015

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