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Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$

Dong-Yun Chen·Dashuai Ma·Junxi Duan·Dong Chen·Haiwen Liu·Junfeng Han·Yugui Yao
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Abstract

The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crystals. Two electron-type samples with different electron concentrations are investigated. Both samples have saturation resistivity behavior in low temperature. In the low-concentration sample, two-dimensional quantum oscillations are clearly observed in the magnetoresistance measurements, which are attributed to the band-bending-induced surface state on the (001) facet. In the high-concentration sample, the angular magnetoresistance exhibits two pairs of symmetrical sharp valleys with an angular difference close to the angle between the crystal planes (001) and (100). The additional valley can be explained by the contribution of the boundary states on the (100) facet. Besides, Hall measurements at low temperatures reveal an anomalous decrease of electron concentration with increasing temperature, which can be explained by the temperature-induced Lifshitz transition. These results shed light on the abundant surface and boundary state transport signals and the temperature-induced Lifshitz transition in Bi$_4$Br$_4$.

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Dong-Yun Chen, Dashuai Ma, Junxi Duan, Dong Chen, Haiwen Liu, Junfeng Han, Yugui Yao. 2022-03-12. Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$. https://doi.org/10.1103/physrevb.106.075206

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