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arXiv · 2202.13442

Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity

Asaf Hershkovitz·Elangovan Hemaprabha·Doaa Khorshid·Liyang Ma·Shi Liu·Shai Cohen·Yachin Ivry
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Abstract

Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions.

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Asaf Hershkovitz, Elangovan Hemaprabha, Doaa Khorshid, Liyang Ma, Shi Liu, Shai Cohen, Yachin Ivry. 2022-02-27. Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity. https://arxiv.org/abs/2202.13442

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