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arXiv · 2112.13431

Extrinsic ferroelectricity originated from oxygen vacancy drift in HfO2-based films

Yong Cheng·Maoyuan Zheng·Xingwang Zhang·Hao Dong·Yitian Jiang·Jinliang Wu·Jing Qi·Zhigang Yin
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Abstract

It is generally accepted that oxygen vacancies play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit, we propose that the observed ferroelectricity is extrinsic. A key finding is that charged oxygen vacancies oscillate within the sample under repeated electric pulses, yielding a nonlinear current which behaves similarly to the polarization current for a normal ferroelectric. This unwanted current signal results in a ferroelectric-like hysteresis loop with both remnant polarization and coercive field in good agreements with experimental values, given a charged oxygen vacancy concentration in the vicinity of 1*10^20/cm^3. Moreover, it is possible to exploit this mechanism to reproduce the effects of wake-up, split-up and limited endurance that are of crucial relevance for the device applications.

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Yong Cheng, Maoyuan Zheng, Xingwang Zhang, Hao Dong, Yitian Jiang, Jinliang Wu, Jing Qi, Zhigang Yin. 2021-12-26. Extrinsic ferroelectricity originated from oxygen vacancy drift in HfO2-based films. https://arxiv.org/abs/2112.13431

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