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arXiv · 2112.08999

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

G. Iacobucci·L. Paolozzi·P. Valerio·T. Moretti·F. Cadoux·R. Cardarelli·R. Cardella·S. Débieux·Y. Favre·D. Ferrere·S. Gonzalez-Sevilla·Y. Gurimskaya·R. Kotitsa·C. Magliocca·F. Martinelli·M. Milanesio·M. Münker·M. Nessi·A. Picardi·J. Saidi·H. Rücker·M. Vicente Barreto Pinto·S. Zambito
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Abstract

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.

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G. Iacobucci, L. Paolozzi, P. Valerio, T. Moretti, F. Cadoux, R. Cardarelli, R. Cardella, S. Débieux, Y. Favre, D. Ferrere, S. Gonzalez-Sevilla, Y. Gurimskaya, R. Kotitsa, C. Magliocca, F. Martinelli, M. Milanesio, M. Münker, M. Nessi, A. Picardi, J. Saidi, H. Rücker, M. Vicente Barreto Pinto, S. Zambito. 2021-12-16. Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology. https://doi.org/10.1088/1748-0221%2F17%2F02%2Fp02019

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