arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · 2112.07034

Mechanism of Spin-Orbit Torques in Platinum Oxide Systems

Jayshankar Nath·Alexandru Vladimir Trifu·Mihai Sebastian Gabor·Ali Hallal·Stephane Auffret·Sebastien Labau·Aymen Mahjoub·Edmond Chan·Avinash Kumar Chaurasiya·Amrit Kumar Mondal·Haozhe Yang·Eva Schmoranzerova·Mohamed Ali Nsibi·Isabelle Joumard·Anjan Barman·Bernard Pelissier·Mairbek Chshiev·Gilles Gaudin·Ioan Mihai Miron
View original source ↗Read source document ↗Export metadata ↓

Abstract

Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.

Explore related subjects

cond-mat.mes-hallcond-mat.mtrl-sci

Keep this discovery

BibTeXRIS

Jayshankar Nath, Alexandru Vladimir Trifu, Mihai Sebastian Gabor, Ali Hallal, Stephane Auffret, Sebastien Labau, Aymen Mahjoub, Edmond Chan, Avinash Kumar Chaurasiya, Amrit Kumar Mondal, Haozhe Yang, Eva Schmoranzerova, Mohamed Ali Nsibi, Isabelle Joumard, Anjan Barman, Bernard Pelissier, Mairbek Chshiev, Gilles Gaudin, Ioan Mihai Miron. 2021-12-13. Mechanism of Spin-Orbit Torques in Platinum Oxide Systems. https://doi.org/10.1002/aelm.202101335

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗
arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗
arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗