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arXiv · 2112.05956

Protected valley states and generation of valley- and spin-polarized current in monolayer MA2Z4

Jiaren Yuan·Qingyuan Wei·Minglei Sun·Xiaohong Yan·Yongqing Cai·Lei Shen·Udo Schwingenschlögl
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Abstract

The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As) family are direct band-gap semiconductors with protected valley states and that circularly polarized infrared light can induce valley-selective inter-band transitions. Our optovalleytronic device demonstrates a close to 100% valley- and spin-polarized current under in-plane bias and circularly polarized infrared light, which can be exploited to encode, process, and store information.

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Jiaren Yuan, Qingyuan Wei, Minglei Sun, Xiaohong Yan, Yongqing Cai, Lei Shen, Udo Schwingenschlögl. 2021-12-11. Protected valley states and generation of valley- and spin-polarized current in monolayer MA2Z4. https://doi.org/10.1103/physrevb.105.195151

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