arXiv · 2111.00530
Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure
Abstract
Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.
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Chithra H. Sharma, Pai Zhao, Lars Tiemann, Marta Prada, Arti Dangwal Pandey, Andreas Stierle, Robert. H. Blick. 2021-10-31. Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure. https://doi.org/10.1063/5.0077077
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