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arXiv · 2110.03612

Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators

Lillian Thiel·Alan D. Logan·Srivatsa Chakravarthi·Shivangi Shree·Karine Hestroffer·Fariba Hatami·Kai-Mei C. Fu
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Abstract

We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion

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Lillian Thiel, Alan D. Logan, Srivatsa Chakravarthi, Shivangi Shree, Karine Hestroffer, Fariba Hatami, Kai-Mei C. Fu. 2021-10-07. Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators. https://arxiv.org/abs/2110.03612

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