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arXiv · 2110.02305

Oxide two-dimensional electron gas with high mobility at room-temperature

Kitae Eom·Hanjong Paik·Jinsol Seo·Neil Campbell·Evgeny Y. Tsymbal·Sang Ho Oh·Mark Rzchowski·Darrell G. Schlom·Chang-beom Eom
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Abstract

The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/V s at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. We achieved this by combining a thick BSO buffer layer with an ex-situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak-beam dark field imaging and in-line electron holography technique, we reveal a reduction of the threading dislocation density, and provide direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface. Our work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics.

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Kitae Eom, Hanjong Paik, Jinsol Seo, Neil Campbell, Evgeny Y. Tsymbal, Sang Ho Oh, Mark Rzchowski, Darrell G. Schlom, Chang-beom Eom. 2021-10-05. Oxide two-dimensional electron gas with high mobility at room-temperature. https://arxiv.org/abs/2110.02305

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