arXiv · 2110.02138
Fast barrier-free switching in synthetic antiferromagnets
Abstract
We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be $ \sim 100 $ pJ, 10-100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.
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Yu. Dzhezherya, V. Kalita, P. Polynchuk, A. Kravets, V. Korenivski, S. Kruchinin, S. Bellucci. 2021-10-05. Fast barrier-free switching in synthetic antiferromagnets. https://arxiv.org/abs/2110.02138
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