Functionalized Tellurene; a candidate large-gap 2D Topological Insulator

Abstract

The discovery of group IV and V elemental Xene's which exhibit topologically non-trivial characters natively in their honeycomb lattice structure (HLS) has led to extensive efforts in realising analogous behaviour in group VI elemental monolayers. Although; it was theoretically concluded that group VI elemental monolayers cannot exist as HLS but recent experimental evidence suggests otherwise. In this letter we report that, HLS of group VI elemental monolayer (such as, Tellurene) can be realised to be dynamically stable when functionzalised with Oxygen. The functionalization leads to, peculiar orbital filtering effects (OFE) and broken spatial inversion symmetry which gives rise to the non-trivial topological character. The exotic quantum behaviour of this system is characterized by, spin-orbit coupling induced large-gap $\approx$ 0.36 eV with isolated Dirac cone along the edges indicating perspective room temperature spin-transport applications. Further investigations of spin Hall conductivity and the Berry curvatures unravel high conductivity as compared to previously explored Xene's. The non-trivial topological character is quantified in terms of the $\mathbb{Z}_2$ invaraint as $\nu =$ 1 and Chern number $\mathit{C} =$ 1. Also, for practical purposes, we report that, \textit{h}BN/TeO/\textit{h}BN quantum-wells can be strain engineered to realize a sizable non-trivial gap ($\approx$ 0.11 eV). We finally conclude that, functionalization of group VI elemental monolayer with Oxygen gives rise to, exotic quantum properties which are robust against surface oxidation and degradations while providing viable electronic degrees of freedom for spintronic applications.