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arXiv · 2108.04446

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Han Yan·Zexin Feng·Peixin Qin·Xiaorong Zhou·Huixin Guo·Xiaoning Wang·Hongyu Chen·Xin Zhang·Haojiang Wu·Chengbao Jiang·Zhiqi Liu
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Abstract

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

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Han Yan, Zexin Feng, Peixin Qin, Xiaorong Zhou, Huixin Guo, Xiaoning Wang, Hongyu Chen, Xin Zhang, Haojiang Wu, Chengbao Jiang, Zhiqi Liu. 2021-08-10. Electric-Field-Controlled Antiferromagnetic Spintronic Devices. https://doi.org/10.1002/adma.201905603

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