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arXiv · 2107.09231

Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties

Jessica Afalla·Elizabeth Ann Prieto·Horace Andrew Husay·Karl Cedric Gonzales·Gerald Catindig·Aizitiaili Abulikemu·Armando Somintac·Arnel Salvador·Elmer Estacio·Masahiko Tani·Muneaki Hase
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Abstract

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si can be very different from those grown on semi-insulating GaAs substrates (reference). In this study, we investigate optical properties of an epitaxial grown LT-GaAs/Si sample, compared to a reference grown under the same substrate temperature, and with the same layer thickness. Anti-phase domains and some crystal misorientation are present in the LT-GaAs/Si. From coherent phonon spectroscopy, the intrinsic carrier densities are estimated to be ~$10^{15}$ cm$^{-3}$ for either sample. Strong plasmon damping is also observed. Carrier dynamics, measured by time-resolved THz spectroscopy at high excitation fluence, reveals markedly different responses between samples. Below saturation, both samples exhibit the desired fast response. Under optical fluences $\geq$ 54 $μ$ J/cm$^2$, the reference LT-GaAs layer shows saturation of electron trapping states leading to non-exponential behavior, but the LT-GaAs/Si maintains a double exponential decay. The difference is attributed to the formation of As-As and Ga-Ga bonds during the heteroepitaxial growth of LT-GaAs/Si, effectively leading to a much lower density of As-related electron traps.

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Jessica Afalla, Elizabeth Ann Prieto, Horace Andrew Husay, Karl Cedric Gonzales, Gerald Catindig, Aizitiaili Abulikemu, Armando Somintac, Arnel Salvador, Elmer Estacio, Masahiko Tani, Muneaki Hase. 2021-07-20. Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties. https://doi.org/10.1088/1361-648x%2Fac04cc

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