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arXiv · 2106.15460

Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor

Qiusong Chen·Juan E. Sanchez·Dong Lin·Yanlian Lei·Guodong Zhu
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Abstract

Structural defects and chemical impurities exist in organic semiconductors acting as trap centers for the excited states. This work presents a novel analytical model to calculate the trapping and detrapping rates between two Gaussian density of states. Miller-Abrahams rate and Fermi-Dirac statistics are employed in this model. The introduction of effective filled and empty sites for correlated bands greatly simplifies the expression of recombination rate. A technology computer-aided design simulator was used to simulate the donor-like traps in an organic semiconductor DPP-DTT based thin-film transistor, showing good agreement with the measured transfer characteristic.

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Qiusong Chen, Juan E. Sanchez, Dong Lin, Yanlian Lei, Guodong Zhu. 2021-06-29. Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor. https://doi.org/10.1016/j.orgel.2022.106464

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