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arXiv · 2106.04035

Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe$_4$Se

Xing Wang·Wenhui Wan·Yanfeng Ge·Yong Liu
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Abstract

Based on density functional theory (DFT), we investigate the electronic properties of bulk and single-layer ZrTe$_4$Se. The band structure of bulk ZrTe$_4$Se can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7\% tensile strain. Meanwhile, the Z$_2$ invariants (0; 110) demonstrate conclusively it is a weak topological insulator (WTI). The two Dirac cones for the (001) surface further confirm the nontrivial topological nature. The single-layer ZrTe$_4$Se is a quantum spin Hall (QSH) insulator with a band gap 86.4 meV and Z$_2$=1, the nontrivial metallic edge states further confirm the nontrivial topological nature. The maximum global band gap is 0.211 eV at the tensile strain 8\%. When the compressive strain is more than 1\%, the band structure of single-layer ZrTe$_4$Se produces a TI-to-semimetal transition. These theoretical analysis may provide a method for searching large band gap TIs and platform for topological nanoelectronic device applications.

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Xing Wang, Wenhui Wan, Yanfeng Ge, Yong Liu. 2021-06-08. Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe$_4$Se. https://doi.org/10.1088/1367-2630/ac2712

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