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arXiv · 2105.05390

Disorder effects in topological insulator nanowires

Yi Huang·B. I. Shklovskii
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Abstract

Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration $N \sim 10^{19}$ cm$^{-3}$ of Coulomb impurities. It is believed that a MBS device can function only if the amplitude of long-range fluctuations of the random Coulomb potential $Γ$ is smaller than the subband gap $Δ$. Here we calculate $Γ$ for recently experimentally studied large-dielectric-constant (Bi$_{1-x}$Sb$_x$)$_2$Te$_{3}$ wires in a small-dielectric-constant environment (no superconductor). We show that provided by such a dielectric-constant contrast, the confinement of electric field of impurities within the wire allows more distant impurities to contribute into $Γ$, leading to $Γ\sim 3Δ$. We also calculate a TI wire resistance as a function of the Fermi level and carrier concentration due to scattering on Coulomb and neutral impurities, and do not find observable discrete subband-spectrum related oscillations at $N \gtrsim 10^{18}$ cm$^{-3}$.

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Yi Huang, B. I. Shklovskii. 2021-08-19. Disorder effects in topological insulator nanowires. https://doi.org/10.1103/physrevb.104.054205

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