Bending of core-shell nanowires by asymmetric shell deposition

Abstract

Freestanding semiconductor nanowires have opened up new possibilities for semiconductor devices, enabling geometries, material combinations and strain states which were not previously possible. Along these lines, spontaneous bending in asymmetric core-shell nanowire heterostructures has recently been proposed as a means to realize previously unimagined device geometries, novel strain-gradient engineering and bottom-up device fabrication. The synthesis of these nanostructures exploits the nanowire geometry and the directionality of the shell deposition process. Here, we explore the underlying mechanisms of this bending process by modeling the evolution of nanowires during asymmetric shell deposition. We show how bending can lead to dramatic local shell thickness, curvature and strain variations along the length of the nanowire, and we elucidate the dependence of shell growth and bending on parameters such as the core and shell dimensions and materials, and angle of incidence of the deposition source. In addition, deposition shadowing by neighboring nanowires is explored. We show that shadowing can easily be employed to connect nanowire pairs, which could be used to fabricate novel nanowire sensors. Model results are compared with GaAs-InP and GaAs-(Al,In)As core-shell nanowire growth experiments. These results can be used to guide future experiments and to help pave the way to bent nanowire devices.