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arXiv · 2104.08124

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Emanuele Longo·Matteo Belli·Mario Alia·Martino Rimoldi·Raimondo Cecchini·Massimo Longo·Claudia Wiemer·Lorenzo Locatelli·Gianluca Gubbiotti·Marco Fanciulli·Roberto Mantovan
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Abstract

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length {\lambda}IEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.

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Emanuele Longo, Matteo Belli, Mario Alia, Martino Rimoldi, Raimondo Cecchini, Massimo Longo, Claudia Wiemer, Lorenzo Locatelli, Gianluca Gubbiotti, Marco Fanciulli, Roberto Mantovan. 2021-04-16. Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon. https://doi.org/10.1002/adfm.202109361

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