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arXiv · 2104.06187

Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Berengar Leikert·Judith Gabel·Matthias Schmitt·Martin Stübinger·Philipp Scheiderer·Louis Veyrat·Tien-Lin Lee·Michael Sing·Ralph Claessen
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Abstract

Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

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Berengar Leikert, Judith Gabel, Matthias Schmitt, Martin Stübinger, Philipp Scheiderer, Louis Veyrat, Tien-Lin Lee, Michael Sing, Ralph Claessen. 2021-04-13. Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures. https://doi.org/10.1103/physrevmaterials.5.065003

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