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arXiv · 2104.02114

Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

M. Auf der Maur·G. Moses·J. M. Gordon·X. Huang·Y. Zhao·E. A. Katz
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Abstract

We have analyzed the temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley-Read-Hall lifetime is used and device heating is taken into account.

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M. Auf der Maur, G. Moses, J. M. Gordon, X. Huang, Y. Zhao, E. A. Katz. 2021-04-05. Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells. https://doi.org/10.1016/j.solmat.2021.111253

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