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arXiv · 2104.00723

Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires

Lukas Stampfer·Damon J. Carrad·Dags Olsteins·Christian E. N. Petersen·Sabbir A. Khan·Peter Krogstrup·Thomas S. Jespersen
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Abstract

Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models.

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Lukas Stampfer, Damon J. Carrad, Dags Olsteins, Christian E. N. Petersen, Sabbir A. Khan, Peter Krogstrup, Thomas S. Jespersen. 2021-04-01. Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires. https://arxiv.org/abs/2104.00723

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