arXiv · 2103.13846
Heating of a trapped ion induced by dielectric materials
Abstract
Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion's motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.
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Markus Teller, Dario A. Fioretto, Philip C. Holz, Philipp Schindler, Viktor Messerer, Klemens Schüppert, Yueyang Zou, Rainer Blatt, John Chiaverini, Jeremy Sage, Tracy E. Northup. 2021-03-25. Heating of a trapped ion induced by dielectric materials. https://doi.org/10.1103/physrevlett.126.230505
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