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arXiv · 2103.02692

Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics

Simone Assali·Anis Attiaoui·Sebastian Koelling·Mahmoud R. M. Atalla·Aashish Kumar·Jérôme Nicolas·Faqrul A. Chowdhury·Cédric Lemieux-Leduc·Oussama Moutanabbir
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Abstract

A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge on Si substrate. Atomic-level studies demonstrate high crystalline quality and uniform composition and show no sign of short-range ordering and clusters. Room temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 {\mu}m wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared band gap tunable by alloy composition. These results underline the relevance of SiGeSn semiconductors in implementing a group IV material platform for silicon-integrated infrared optoelectronics.

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Simone Assali, Anis Attiaoui, Sebastian Koelling, Mahmoud R. M. Atalla, Aashish Kumar, Jérôme Nicolas, Faqrul A. Chowdhury, Cédric Lemieux-Leduc, Oussama Moutanabbir. 2021-03-03. Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. https://doi.org/10.1063/5.0120505

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