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arXiv · 2102.11999

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

Sanghyun Lee·Masayuki Hashisaka·Takafumi Akiho·Kensuke Kobayashi·Koji Muraki
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Abstract

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.

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Sanghyun Lee, Masayuki Hashisaka, Takafumi Akiho, Kensuke Kobayashi, Koji Muraki. 2021-02-24. Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements. https://doi.org/10.1063/5.0036419

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