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arXiv · 2102.04314

Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells

Zhifa Liu·Johanna Siekmann·Benjamin Klingebiel·Uwe Rau·Thomas Kirchartz
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Abstract

Non-radiative recombination processes are the biggest hindrance to approaching the radiative limit of the open-circuit voltage for wide-band gap perovskite solar cells. In addition, to high bulk quality, good interfaces and good energy level alignment for majority carriers at charge transport layer-absorber interfaces are crucial to minimize non-radiative recombination pathways. By tuning the lowest-unoccupied molecular-orbital of electron transport layers via the use of different fullerenes and fullerene blends, we demonstrate open-circuit voltages exceeding 1.35 V in CH3NH3Pb(I0.8Br0.2)3 device. Further optimization of mobility in binary fullerenes electron transport layer can boost the power conversion efficiency as high as 18.6%. We note in particular that the Voc-fill factor product is > 1.085 V, which is the highest value reported for halide perovskites with this band gap.

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Zhifa Liu, Johanna Siekmann, Benjamin Klingebiel, Uwe Rau, Thomas Kirchartz. 2021-02-08. Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells. https://arxiv.org/abs/2102.04314

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