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arXiv · 2102.03415

Multi-state MRAM cells for hardware neuromorphic computing

Piotr Rzeszut·Jakub Chęciński·Ireneusz Brzozowski·Sławomir Ziętek·Witold Skowroński·Tomasz Stobiecki
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Abstract

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of a new platforms for unconventional or bio-inspired computing. In the present work, it is shown that serially connected MTJs forming a multi-state memory cell can be used in a hardware implementation of a neural computing device. A behavioral model of the multi-cell is proposed based on the experimentally determined MTJ parameters. The main purpose of the mutli-cell is the formation of the quantized weights of the network, which can be programmed using the proposed electronic circuit. Mutli-cells are connected to CMOS-based summing amplifier and sigmoid function generator, forming an artificial neuron. The operation of the designed network is tested using a recognition of the hand-written digits in 20x20 pixel matrix and shows detection ratio comparable to the software algorithm, using the weight stored in a multi-cell consisting of four MTJs or more.

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Piotr Rzeszut, Jakub Chęciński, Ireneusz Brzozowski, Sławomir Ziętek, Witold Skowroński, Tomasz Stobiecki. 2021-02-05. Multi-state MRAM cells for hardware neuromorphic computing. https://arxiv.org/abs/2102.03415

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