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arXiv · 2012.15123

Memory device employing hysteretic properties of a tungsten filament in superfluid helium-4

Che-Chi Shih·Ming-Huei Huang·Pang-Chia Chang·Po-Wei Yu·Wen-Bin Jian·Kimitoshi Kono
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Abstract

A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state and becomes covered with a helium gas sheath. The return to an ohmic state occurs at a lower voltage because of the poor heat conduction of the gas sheath. Hence, the $I$-$V$ characteristic is strongly hysteretic. The stable hysteresis window was employed to fabricate a novel memory device, which demonstrated fast switching and stable reading.

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Che-Chi Shih, Ming-Huei Huang, Pang-Chia Chang, Po-Wei Yu, Wen-Bin Jian, Kimitoshi Kono. 2020-12-30. Memory device employing hysteretic properties of a tungsten filament in superfluid helium-4. https://arxiv.org/abs/2012.15123

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