Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers

Christian Fuchs; Ada Baeumner; Anja Brueggemann; Christian Berger; Christoph Moeller; Stefan Reinhard; Joerg Hader; Jerome V. Moloney; Stephan W. Koch; Wolfgang Stolz

arXiv · 2012.01522

Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers

Christian Fuchs·Ada Baeumner·Anja Brueggemann·Christian Berger·Christoph Moeller·Stefan Reinhard·Joerg Hader·Jerome V. Moloney·Stephan W. Koch·Wolfgang Stolz

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Abstract

This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Furthermore, gain spectra for a W-quantum well heterostructure are calculated up to high charge carrier densities. At these high charge carrier densities, the interplay between multiple type-II transitions results in broad and flat gain spectra with a spectral width of approximately 160 nm. Furthermore, the temperature-dependent properties of broad-area edge-emitting lasers are analyzed using electroluminescence as well as laser characteristic measurements. A first indication for the theoretically predicted broad gain spectra is presented and the interplay between the temperature-dependent red shift and the charge carrier density-dependent blue shift is discussed. A combination of these effects results in a significant reduction of the temperature-induced red shift of the emission wavelengths and even negative shift rates of (-0.10 plusminus 0.04) nm/K are achieved.

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Christian Fuchs, Ada Baeumner, Anja Brueggemann, Christian Berger, Christoph Moeller, Stefan Reinhard, Joerg Hader, Jerome V. Moloney, Stephan W. Koch, Wolfgang Stolz. 2020-12-02. Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers. https://arxiv.org/abs/2012.01522

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